The formula to calculate the Conductivity of Extrinsic Semiconductors (n-type) (σn) is:
\[ \sigma_n = N_d \cdot [\text{Charge-e}] \cdot \mu_n \]
Conductivity of extrinsic semiconductors (n-type) is the measure of the ease at which an electric charge or heat can pass through an extrinsic semiconductor material of n-type. Donor concentration is the concentration of electrons in the donor state. Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.
Let's assume the following values:
Using the formula:
\[ \sigma_n = 2E+17 \cdot 1.60217662E-19 \cdot 180 \approx 5.767835832 \]
The Conductivity is approximately 5.767835832 S/m.
| Donor Concentration (1/m³) | Mobility of Electron (m²/V·s) | Conductivity (S/m) |
|---|---|---|
| 1.0E+17 | 180 | 2.883917916000 |
| 1.1E+17 | 180 | 3.172309707600 |
| 1.2E+17 | 180 | 3.460701499200 |
| 1.3E+17 | 180 | 3.749093290800 |
| 1.4E+17 | 180 | 4.037485082400 |
| 1.5E+17 | 180 | 4.325876874000 |
| 1.6E+17 | 180 | 4.614268665600 |
| 1.7E+17 | 180 | 4.902660457200 |
| 1.8E+17 | 180 | 5.191052248800 |
| 1.9E+17 | 180 | 5.479444040400 |
| 2.0E+17 | 180 | 5.767835832000 |
| 2.1E+17 | 180 | 6.056227623600 |
| 2.2E+17 | 180 | 6.344619415200 |
| 2.3E+17 | 180 | 6.633011206800 |
| 2.4E+17 | 180 | 6.921402998400 |
| 2.5E+17 | 180 | 7.209794790000 |
| 2.6E+17 | 180 | 7.498186581600 |
| 2.7E+17 | 180 | 7.786578373200 |
| 2.8E+17 | 180 | 8.074970164800 |
| 2.9E+17 | 180 | 8.363361956400 |
| 3.0E+17 | 180 | 8.651753748000 |